BA1L4M,Renesas Electronics BA1L4M,Transistors RF

Manufacturer Part#:	BA1L4M
Manufacturer:	Renesas Electronics
STOCK on hand:	22993
Category:	Semiconductors - Transistors RF
Description:	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SPAK
Lifecycle:	Discontinued
RoHS:
Quantity:	piece

Quote More

Part Number *	Qty *	Target Price,US$/Unit	Manufacturer	Date Code	Reset

Relate Parts

B45196-E5474-M109Cap,Tantalum / Ta2O5,470nF,25VDC,20% -Tol,20% +Tol
BFS460L6-E6327TRANSISTOR,BJT,PAIR,NPN,4.5V V(BR)CEO,50MA I(C),SMT
BD529-1TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C)
BPNGA16EIC,LINE DRIVER,4 DRIVER,BIPOLAR,SOJ,16PIN,PLASTIC
BRA114ECMTLPRE-BIASED DIGITAL TRANSISTOR,100MA I(C),SOT-323
BYV74-300RECTIFIER DIODES,COMMON CATHODE,300V V(RRM),TO-218AA
BSW59TRANSISTOR,BJT,NPN,12V V(BR)CEO,500MA I(C),SIP
BSH105T/RTRANSISTOR,MOSFET,N-CHANNEL,12V V(BR)DSS,1.5A I(D),TO-236AB
B390RECTIFIER DIODE,SCHOTTKY,90V V(RRM),DO-214AB / SMC
BXC80557420IC,MICROPROCESSOR,64-BIT,LGA,775PIN,PLASTIC
BSTD4126MSILICON CONTROLLED RECTIFIER,400V V(DRM),12A I(T),STR-M8
BF1203IC,AUTOMATIC GAIN CONTROL (AGC) CIRCUIT,MOS,TSSOP,5PIN,PLASTIC
B48202C2TRECTIFIER DIODES,COMMON CATHODE,600V V(RRM),MODULE-Q
BCR16KM-12LATRIAC,600V V(DRM),16A I(T)RMS,TO-220AB(FP)
BGY1816IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,HYBRID,FLANGE MT,PLASTIC
BTK1A16EIC,LINE TRANSCEIVER,BIPOLAR,2 DRIVER,2 RCVR,SOJ,16PIN,PLASTIC
BCR185FPRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SMT
BYV26EGPRECTIFIER DIODE,1KV V(RRM),DO-204AC
B37941K5682K001Cap,Ceramic,6.8nF,50VDC,10% -Tol,10% +Tol,X7R TC Code,-15,15% TC,0805 Case
BSY32TRANSISTOR,BJT,NPN,15V V(BR)CEO,100MA I(C),SO
B39389-K7291-M100IC,SURFACE ACOUSTIC WAVE FILTER,SIP,5PIN,PLASTIC
BU406FTRANSISTOR,BJT,NPN,200V V(BR)CEO,7A I(C),SOT-186
BUK7620-100ATRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,63A I(D),TO-263AB
B82432-T1153-KInd,Ferrite,15uH,10% +Tol,10% -Tol,1812 Case
B32522-C155-JCap,Met Polyester (MYLAR),1.5uF,63VDC,5% -Tol,50% +Tol
BT8070KPJIC,PCM TRANSCEIVER,SINGLE,CEPT PCM-30/E-1,CMOS,LDCC,68PIN,PLASTIC
BO274D0475KCap,Met Polyester (MYLAR),4.7uF,63VDC,10% -Tol,10% +Tol
B57164K0333K000Res,Radial,Ceramic Composition,33K Ohms,10% +/-Tol,2220 Case
BFG11/XTRANSISTOR,BJT,NPN,8V V(BR)CEO,500MA I(C),SOT-143
BFY90BTRANSISTOR,BJT,NPN,15V V(BR)CEO,20MA I(C),TO-72
TGL41-12A-E3/46TVS Diodes - Transient Voltage Suppressors 400W 12V Unidirect
SMA5J16CA-E3/2GTVS Diodes - Transient Voltage Suppressors 500W 16V Bidirect
BYM12-300HE3/75Rectifiers 300 Volt 1.0A 50ns Glass Passivated
FDD6692MOSFET 30V N-Ch PowerTrench
PMST6428 T/RTransistors Bipolar (BJT) TRANS GP TAPE-7
MAX471ESASpecial Purpose Amplifiers
FMMTA20TATransistors Bipolar (BJT) -
ZTX656STOATransistors Bipolar (BJT) -
BSS70TATransistors Bipolar (BJT) -
EGF1CHE3/69ARectifiers 150 Volt 1.0A 50ns Glass Passivated
P6SMB11AT3GTVS Diodes - Transient Voltage Suppressors 11V 600W Unidirectional
SMCJ10HE3/9ATTVS Diodes - Transient Voltage Suppressors 1.5KW 10V 10% Unidir
HV9808PJCounter Shift Registers 80V 32Ch Hi-V Out
BF824 T/RTransistors Bipolar (BJT) TRANS MED FREQ TAPE-7
M4-32/32-18VI48CPLD - Complex Programmable Logic Devices Use ispMACH 4000V or M4A5
FAN7862ANPower Driver ICs FAN
MBR10100CT-E3/45Schottky (Diodes & Rectifiers) 10 Amp 100 Volt
IPP05CN10LGXKMOSFET N-CH 100V 100A
SD2943MOSFET RF POWER TRANS
STB55NF03LT4MOSFET N-Ch 30 Volt 55 Amp
IPD70N04S3-07MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms
IPB180N04S3-02MOSFET N-CH 40V 180 A
ST4460FXTransistors Bipolar (BJT) Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR
IPB47N10S-33MOSFET SIPMOS PWR-TRNSTR 100V 47A
IPW60R045CPAMOSFET CoolMOS Power Transistor
IPI028N08N3 GMOSFET OptiMOS 3 PWR TRANST 80V 100A
BLF6G38-10Transistors RF MOSFET Small Signal LDMOS TNS
STF10NM65NMOSFET N-Channel 650V Power MDmesh
IPP024N06N3 GMOSFET N-KANAL POWER MOS
FDP047AN08A0_F102MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH

Alternate Names

BA1L4M Semiconductors
BA1L4M Transistors RF
BA1L4M Renesas Electronics Semiconductors
BA1L4M Renesas Electronics Transistors RF