KM100490-12,Samsung Electronics KM100490-12,SRAM Chip

Manufacturer Part#:	KM100490-12
Manufacturer:	Samsung Electronics
STOCK on hand:	25969
Category:	Memory - SRAM Chip
Description:	IC,SRAM,64KX1,BICMOS-ECL100,DIP,22PIN,CERAMIC
Lifecycle:	Discontinued
RoHS:
Quantity:	piece

Quote More

Part Number *	Qty *	Target Price,US$/Unit	Manufacturer	Date Code	Reset

Relate Parts

KM611001J-20IC,SRAM,1MX1,CMOS,SOJ,28PIN,PLASTIC
M52320SPIC,VIDEO AMPLIFIER,BIPOLAR,SDIP,36PIN,PLASTIC
LM2927TIC,VOLT REGULATOR,FIXED,+5V,BIPOLAR,ZIP,5PIN,PLASTIC
LP2982AIM5-2.5IC,VOLT REGULATOR,FIXED,+2.5V,BIPOLAR,TSOP,5PIN,PLASTIC
LM299HIC,VOLT REFERENCE,FIXED,6.95V,BIPOLAR,TO-46,4PIN,METAL
LT1126AMJ8IC,OP-AMP,DUAL,BIPOLAR,DIP,8PIN,CERAMIC
LP2982IM5X-2.6IC,VOLT REGULATOR,FIXED,+2.6V,BIPOLAR,TSOP,5PIN,PLASTIC
LM226HIC,VOLT REGULATOR,FIXED,+-12V,BIPOLAR,CAN,10PIN,METAL
QM50DY2HTRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,1KV V(BR)CEO,50A I(C)
QM50CY-HTRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,600V V(BR)CEO,50A I(C)
QM75DY-HTRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,600V V(BR)CEO,75A I(C)
QM75DY2HTRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,1KV V(BR)CEO,75A I(C)
RM10TN-HBRIDGE RECTIFIER,3-PHASE FULL WAVE,800V V(RRM),M:HL065HD4.0
S50BF1004BGTRes,SMT,Metal Film,1M Ohms,100WV,.1% +/-Tol,-10,10ppm TC,0505 Case
SG1500EX24SILICON CONTROLLED RECTIFIER,2.5KV V(DRM),750A I(T),TO-200VAR75
SG4000EX26THYRISTOR,GTO,2.5KV V(DRM),TO-200VAR120
SHR400R22THYRISTOR,REVERSE-CONDUCTING,1.3KV V(DRM),TO-200VAR78
SI7501DN-T1TRANSISTOR,MOSFET,COMMON DRAIN,COMPLEMENTARY,30V V(BR)DSS,5.4A I(D),LLCC
SK80DA020DTRANSISTOR,BJT POWER MODULE,DARLINGTON,200V V(BR)CEO,120A I(C)
SKB30/12BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1.2KV V(RRM),MODULE-S
SKB30/16BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1.6KV V(RRM),MODULE-S
SKB30/08BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),MODULE-S
SKB50/16BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1.6KV V(RRM),MODULE-S
SKB50/04BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),MODULE-S
SKB50/12BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1.2KV V(RRM),MODULE-S
SKIM250GD128DTRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.2KV V(BR)CES,180A I(C)
SKIM400GD128DTRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.2KV V(BR)CES,270A I(C)
SKKH56/12DTHYRISTOR MODULE,DOUBLER,HALF-CNTLD,POSITIVE,1.2KV V(RRM),55A I(T)
SKKH91/12ETHYRISTOR MODULE,DOUBLER,HALF-CNTLD,POSITIVE,95A I(T)
SKKH91/12DTHYRISTOR MODULE,DOUBLER,HALF-CNTLD,POSITIVE,1.2KV V(RRM),95A I(T)
P2764-3IC,EPROM,8KX8,MOS,DIP,28PIN,PLASTIC
QD2732AIC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
QD27C128-150V05IC,EPROM,16KX8,CMOS,DIP,28PIN,CERAMIC
QD27C64-2IC,EPROM,8KX8,CMOS,DIP,28PIN,CERAMIC
Q87C257-150V10IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC
QD27C210-130V10IC,EPROM,64KX16,CMOS,DIP,40PIN,CERAMIC
QD27512-200V05IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27512-170V05IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27C210-200V10IC,EPROM,64KX16,CMOS,DIP,40PIN,CERAMIC
R29791DM/883BIC,PROM,8KX8,BIPOLAR,DIP,24PIN,CERAMIC
QD27C512-120V10IC,EPROM,64KX8,CMOS,DIP,28PIN,CERAMIC
QC27010-250V05IC,EPROM,128KX8,MOS,DIP,32PIN,CERAMIC
QD27128-45IC,EPROM,16KX8,MOS,DIP,28PIN,CERAMIC
QD27512IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27C512-150V10IC,EPROM,64KX8,CMOS,DIP,28PIN,CERAMIC
Q27C020-150V10IC,EPROM,256KX8,CMOS,DIP,32PIN,CERAMIC
QD27C010-120V10IC,EPROM,128KX8,CMOS,DIP,32PIN,CERAMIC
QD27C220-200V10IC,EPROM,128KX16,CMOS,DIP,40PIN,CERAMIC
QD2732A-4IC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
QD27C020-200V10IC,EPROM,256KX8,CMOS,DIP,32PIN,CERAMIC
QD27C256-1IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC
QD2764-2IC,EPROM,8KX8,MOS,DIP,28PIN,CERAMIC
P2164B-15IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,PLASTIC
P27C220-200V10IC,EPROM,128KX16,CMOS,DIP,40PIN,PLASTIC
QD27010-200V05IC,EPROM,128KX8,MOS,DIP,32PIN,CERAMIC
P8155-2IC,RIOT,256X8,MOS,DIP,40PIN,PLASTIC
QD2732A-3IC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
R29653DM/883BIC,PROM,2KX4,TTL,DIP,18PIN,CERAMIC
R23128-25CIC,ROM,16KX8,MOS,DIP,28PIN,CERAMIC
R29631ADCIC,PROM,1KX8,TTL,DIP,24PIN,CERAMIC

Alternate Names

KM100490-12 Memory
KM100490-12 SRAM Chip
KM100490-12 Samsung Electronics Memory
KM100490-12 Samsung Electronics SRAM Chip