KM416C1200CJ-6,Samsung Electronics KM416C1200CJ-6,DRAM Chip

Manufacturer Part#:	KM416C1200CJ-6
Manufacturer:	Samsung Electronics
STOCK on hand:	26010
Category:	Memory - DRAM Chip
Description:	IC,DRAM,FAST PAGE,1MX16,CMOS,SOJ,42PIN,PLASTIC
Lifecycle:	Discontinued
RoHS:
Quantity:	piece

Quote More

Part Number *	Qty *	Target Price,US$/Unit	Manufacturer	Date Code	Reset

Relate Parts

KM736V889T-72IC,SYNC SRAM,256KX36,CMOS,QFP,100PIN,PLASTIC
KM416C254DJ-4IC,DRAM,EDO,256KX16,CMOS,SOJ,40PIN,PLASTIC
25C6RECTIFIER DIODE,600V V(RRM),STF-M18
1008HS-101TJBCInd,Ceramic,100nH,5% +Tol,5% -Tol,1110 Case
1T378AVARACTOR DIODE,SINGLE,39PF C(T),DO-215VAR
1008CS-151XGBCInd,Ceramic,150nH,2% +Tol,2% -Tol,1111 Case
2SA1035RTRANSISTOR,BJT,PNP,55V V(BR)CEO,50MA I(C),TO-236AB
KM736V847T-10IC,SYNC SRAM,256KX36,CMOS,QFP,100PIN,PLASTIC
1812LS-473XJBCInd,Ceramic,47uH,5% +Tol,5% -Tol,1915 Case
1008CS-821XGBCInd,Ceramic,820nH,2% +Tol,2% -Tol,1111 Case
1008LS-103XKGBInd,Wirewound,10uH,10% +Tol,10% -Tol,1111 Case
2SB1219ASTRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SC-70
1008HS-821TFBBInd,Non-Magnetic,820nH,1% +Tol,1% -Tol,1110 Case
1008HS-560TJBCInd,Ceramic,56nH,5% +Tol,5% -Tol,1110 Case
1008CS-122XGBCInd,Ceramic,1.2uH,2% +Tol,2% -Tol,1111 Case
DS1996L-F5IC,NOVRAM,256X32X8,BUTTON,METAL
1T406VARACTOR DIODE,SINGLE,EMD2
1812CS-182XJBCInd,Ceramic,1.8uH,5% +Tol,5% -Tol,1915 Case
1008CS-122XGBBInd,Ceramic,1.2uH,2% +Tol,2% -Tol,1111 Case
DS1666-050IC,DIGITAL POTENTIOMETER,DIP,14PIN,PLASTIC
1008LS-682XJGBInd,Wirewound,6.8uH,5% +Tol,5% -Tol,1111 Case
1008CS-560XJBCInd,Ceramic,56nH,5% +Tol,5% -Tol,1111 Case
2SC4853-5TRANSISTOR,BJT,NPN,6V V(BR)CEO,15MA I(C),SOT-323
1812LS-563XJBCInd,Ceramic,56uH,5% +Tol,5% -Tol,1915 Case
1812LS-104XKBCInd,Ceramic,100uH,10% +Tol,10% -Tol,1915 Case
2SB792STRANSISTOR,BJT,PNP,150V V(BR)CEO,50MA I(C),TO-236AB
2SA1587GRTRANSISTOR,BJT,PNP,120V V(BR)CEO,100MA I(C),SOT-323
2SC2223F13TRANSISTOR,BJT,NPN,20V V(BR)CEO,20MA I(C),SOT-346
2SC4853-4TRANSISTOR,BJT,NPN,6V V(BR)CEO,15MA I(C),SOT-323
AK93C46MFIC,SERIAL EEPROM,64X16,CMOS,SOP,8PIN,PLASTIC
P2764-3IC,EPROM,8KX8,MOS,DIP,28PIN,PLASTIC
QD2732AIC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
QD27C128-150V05IC,EPROM,16KX8,CMOS,DIP,28PIN,CERAMIC
QD27C64-2IC,EPROM,8KX8,CMOS,DIP,28PIN,CERAMIC
Q87C257-150V10IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC
QD27C210-130V10IC,EPROM,64KX16,CMOS,DIP,40PIN,CERAMIC
QD27512-200V05IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27512-170V05IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27C210-200V10IC,EPROM,64KX16,CMOS,DIP,40PIN,CERAMIC
R29791DM/883BIC,PROM,8KX8,BIPOLAR,DIP,24PIN,CERAMIC
QD27C512-120V10IC,EPROM,64KX8,CMOS,DIP,28PIN,CERAMIC
QC27010-250V05IC,EPROM,128KX8,MOS,DIP,32PIN,CERAMIC
QD27128-45IC,EPROM,16KX8,MOS,DIP,28PIN,CERAMIC
QD27512IC,EPROM,64KX8,MOS,DIP,28PIN,CERAMIC
QD27C512-150V10IC,EPROM,64KX8,CMOS,DIP,28PIN,CERAMIC
Q27C020-150V10IC,EPROM,256KX8,CMOS,DIP,32PIN,CERAMIC
QD27C010-120V10IC,EPROM,128KX8,CMOS,DIP,32PIN,CERAMIC
QD27C220-200V10IC,EPROM,128KX16,CMOS,DIP,40PIN,CERAMIC
QD2732A-4IC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
QD27C020-200V10IC,EPROM,256KX8,CMOS,DIP,32PIN,CERAMIC
QD27C256-1IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC
QD2764-2IC,EPROM,8KX8,MOS,DIP,28PIN,CERAMIC
P2164B-15IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,PLASTIC
P27C220-200V10IC,EPROM,128KX16,CMOS,DIP,40PIN,PLASTIC
QD27010-200V05IC,EPROM,128KX8,MOS,DIP,32PIN,CERAMIC
P8155-2IC,RIOT,256X8,MOS,DIP,40PIN,PLASTIC
QD2732A-3IC,EPROM,4KX8,MOS,DIP,24PIN,CERAMIC
R29653DM/883BIC,PROM,2KX4,TTL,DIP,18PIN,CERAMIC
R23128-25CIC,ROM,16KX8,MOS,DIP,28PIN,CERAMIC
R29631ADCIC,PROM,1KX8,TTL,DIP,24PIN,CERAMIC

Alternate Names

KM416C1200CJ-6 Memory
KM416C1200CJ-6 DRAM Chip
KM416C1200CJ-6 Samsung Electronics Memory
KM416C1200CJ-6 Samsung Electronics DRAM Chip